Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Dielectric properties of SBT($SrBi_2Ta_2O_9$) on $Bi_2O_3$/Pt/Ti/$SiO_2$/Si substrate accordiing to various substrate temperature of $Bi_2O_3$ buffer layer

Si(100)기판에 $SrBi_2Ta_2O_9$ 박막증착 시 $Bi_2O_3$ 후열처리에 따른 유전특성

  • Yoon, Ji-Eon (School of Materials Science and Engineering, Pusan National University) ;
  • Cha, Won-Hyo (School of Materials Science and Engineering, Pusan National University) ;
  • Lee, Chul-Su (School of Materials Science and Engineering, Pusan National University) ;
  • Son, Young-Guk (School of Materials Science and Engineering, Pusan National University)
  • Published : 2007.06.21
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Abstract

The SBT($SrBi_2Ta_2O_9$) thin films with $Bi_2O_3$ buffer layer were deposited on Pt/Ti/$SiO_2$/Si substrate by R.F. magnetron sputtering method in order to improve the ferroelectric characteristics. In SBT thin films, the deficiency of bismuth during the process due to its volatility results in an obvious non stoichiometry of the films and the presence of secondary phases. $Bi_2O_3$ buffer layer was found to be effective to achieve the low temperature crystallization and improve the ferroelectric properties of SBT thin films. Ferroelectric properties and crystallinities of SBT thin films with various post annealing of $Bi_2O_3$ buffer layer were observed as various annealing temperature, using X-Ray Diffraction (XRD), scanning electron microscopy (SEM), Keithley 237 and HP 4192A Impedance Analyzer.

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