Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Low-Voltage Organic Thin-Film-Transistors on $Al_2O_3$ Gate Insulators Layer Fabricated by ALD Processing Method

ALD 방식의 $Al_2O_3$ 게이트 절연막을 이용한 저 전압 유기 트랜지스터에 관한 연구

  • Hyung, Gun-Woo (Dept. of Materials Science and Engineering, Hongik University) ;
  • So, Byung-Soo (Dept. of Materials Science and Engineering, Hongik University) ;
  • Lee, Jun-Young (Dept. of Materials Science and Engineering, Hongik University) ;
  • Park, Il-Houng (Dept. of Information Display, Hongik University) ;
  • Choe, Hak-Beom (Dept. of Information Display, Hongik University) ;
  • Hwang, Jin-Ha (Dept. of Materials Science and Engineering, Hongik University) ;
  • Kim, Young-Kwan (Dept. of Information Display, Hongik University)
  • 형건우 (홍익대학교 신소재공학과) ;
  • 소병수 (홍익대학교 신소재공학과) ;
  • 이준영 (홍익대학교 신소재공학과) ;
  • 박일홍 (홍익대학교 정보디스플레이공학과) ;
  • 최학범 (홍익대학교 정보디스플레이공학과) ;
  • 황진하 (홍익대학교 신소재공학과) ;
  • 김영관 (홍익대학교 정보디스플레이공학과)
  • Published : 2007.06.21
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Abstract

we fabricated a pentacene thin-film transistor with an $Al_2O_3$ layer of ALD as a gate insulator and obtained a device with better electrical characteristics at low operating voltages (below 16V). This device was found to have a field-effect mobility of $0.03cm^2/Vs$, a threshold voltage of -6V, an subthreshold slope of 1 V/decade, and an on/off current ratio of $10^6$.

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