Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Titanium nitride thin films for applications in thin film resistors

  • Cuong, Nguyen Duy (Department of Materials Science and Engineering, Chungnam National University) ;
  • Kim, Dong-Jin (KMC technology) ;
  • Kang, Byoung-Don (Department of Materials Science and Engineering, Chungnam National University) ;
  • Yoon, Soon-Gil (Department of Materials Science and Engineering, Chungnam National University)
  • Published : 2007.06.21
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Abstract

Titanium nitride thin films were deposited on $SiO_2$/Si substrate by rf-reactive magnetron sputtering. The structural and electrical properties of the films were investigated with various $N_2/(Ar+N_2)$ flow ratios (nitrogen/argon flow ratio). The resistivity as well as temperature coefficient of resistance (TCR) of the films strongly depends on phase structure. For the films deposited at nitrogen/argon flow ratio of below 5%, the resistivity increased with increasing nitrogen/argon flow ratios. However, the resistivity of the film deposited at nitrogen/argon flow ratio of 7% decreased drastically; it is even smaller than that of metal titanium nitride. A near-zero TCR value of approximately 9 ppm/K was observed for films deposited at nitrogen/argon flow ratio of 3%.

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