Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2007.06a
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- Pages.346-347
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- 2007
Crystal growth of AlN thin films on 3C-SiC buffer layer
3C-SiC 완충층을 이용한 AIN 박막의 결정성장
- Lee, Tae-Won (Univ. of Ulsan) ;
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Chung, Gwiy-Sang
(Univ. of Ulsan)
- Published : 2007.06.21
Abstract
Aluminum nitride (AlN) thin films were deposited on Polycrystalline (poly) 3C-SiC buffer layers using pulsed reactive magnetron sputtering. Characteristics of AlN films were investigated experimentally by means of FE-SEM, X-ray diffraction, and FT-IR, respectively. As a result, highly (002) oriented AlN thin films with almost free residual stress were achieved using 3C-SiC buffer layers. Therefore, AlN thin films grown on 3C-SiC buffer layers can be used for various piezoelectric fields and M/NEMS applications.