Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Electrical, optical, and structural properties of IZTO films grown by co-sputtering method using ITO and IZO target

ITO와 IZO 타겟의 Co-sputtering 방법으로 성장시킨 IZTO 박막의 전기적 광학적 구조적 특성연구

  • Jeong, Jin-A (Department of Information and Nano Materials Engineering, Kumoh National Institute of Technology) ;
  • Choi, Kwang-Hyuk (Department of Information and Nano Materials Engineering, Kumoh National Institute of Technology) ;
  • Moon, Jong-Min (Department of Information and Nano Materials Engineering, Kumoh National Institute of Technology) ;
  • Bae, Jung-Hyeok (Department of Information and Nano Materials Engineering, Kumoh National Institute of Technology) ;
  • Kim, Han-Ki (Department of Information and Nano Materials Engineering, Kumoh National Institute of Technology)
  • 정진아 (금오공과대학교, 정보나노소재공학) ;
  • 최광혁 (금오공과대학교, 정보나노소재공학) ;
  • 문종민 (금오공과대학교, 정보나노소재공학) ;
  • 배정혁 (금오공과대학교, 정보나노소재공학) ;
  • 김한기 (금오공과대학교, 정보나노소재공학)
  • Published : 2007.06.21
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Abstract

The characteristics of a co-sputtered indium zinc tin oxide (IZTO) films prepared by dual target dc magnetron sputtering from IZO and ITO targets at a room temperature are investigated. Film properties, such as sheet resistance, optical transmittance, surface work function and surface roughness were examined as a function of ITO dc power at constant IZO dc power of 100 W. It was shown that the increase of the ITO dc power during co-sputtering of ITO and IZO target resulted in an increase of sheet resistance of the IZTO films. This can be attributed to high resistivity of ITO film prepared at room temperature. Surface smoothness and roughness were investigated by Scanning Electron Microscopy (SEM) and Atomic Force Microscopy (AFM). The synchrotron x-ray scattering results obtained from IZTO film with different ITO contents showed that introduction of ITO atoms into amorphous IZO film resulted in a crystallization of IZTO film with (222) preferred orientation due to low alc transition temperature of ITO film. However, the transmittance of the IZTO films with thickness of 150 nm is between 80 and 85 % at wavelength of 550 nm regardless of ITO content. Possible mechanism to explain the ITO and IZO co-sputtering effect on properties of IZTO is suggested.

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