Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Reliability Analysis of SiGe pMOSFETs Formed on PD-SOI

PD-SOI기판에 제작된 SiGe p-MOSFET의 신뢰성 분석

  • Choi, Sang-Sik (School of Semiconductor and Chemical Engineering Semiconductor Physics Research Center, Chonbuk National University) ;
  • Choi, A-Ram (School of Semiconductor and Chemical Engineering Semiconductor Physics Research Center, Chonbuk National University) ;
  • Kim, Jae-Yeon (School of Semiconductor and Chemical Engineering Semiconductor Physics Research Center, Chonbuk National University) ;
  • Yang, Jeon-Wook (School of Semiconductor and Chemical Engineering Semiconductor Physics Research Center, Chonbuk National University) ;
  • Han, Tae-Hyun (AUK) ;
  • Cho, Deok-Ho (AUK) ;
  • Hwang, Young-Woo (AUK) ;
  • Shim, Kyu-Hwan (School of Semiconductor and Chemical Engineering Semiconductor Physics Research Center, Chonbuk National University)
  • 최상식 (전북대학교 반도체.화학공학부 반도체 물성연구소) ;
  • 최아람 (전북대학교 반도체.화학공학부 반도체 물성연구소) ;
  • 김재연 (전북대학교 반도체.화학공학부 반도체 물성연구소) ;
  • 양전욱 (전북대학교 반도체.화학공학부 반도체 물성연구소) ;
  • 한태현 ;
  • 조덕호 ;
  • 황용우 ;
  • 심규환 (전북대학교 반도체.화학공학부 반도체 물성연구소)
  • Published : 2007.06.21
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Abstract

The stress effect of SiGe p-type metal oxide semiconductors field effect transistors(MOSFETs) has been investigated to compare device properties using Si bulk and partially depleted silicon on insulator(PD SOI). The electrical properties in SiGe PD SOI presented enhancements in subthreshold slope and drain induced barrier lowering in comparison to SiGe bulk. The reliability of gate oxides on bulk Si and PD SOI has been evaluated using constant voltage stressing to investigate their breakdown (~ 8.5 V) characteristics. Gate leakage was monitored as a function of voltage stressing time to understand the breakdown phenomena for both structures. Stress induced leakage currents are obtained from I-V measurements at specified stress intervals. The 1/f noise was observed to follow the typical $1/f^{\gamma}$ (${\gamma}\;=\;1$) in SiGe bulk devices, but the abnormal behavior ${\gamma}\;=\;2$ in SiGe PD SOI. The difference of noise frequency exponent is mainly attributed to traps at silicon oxide interfaces. We will discuss stress induced instability in conjunction with the 1/f noise characteristics in detail.

Keywords

Acknowledgement

Supported by : 한국학술진흥재단