한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)
- 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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- Pages.555-556
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- 2007
Oxide CMP에서 Sliding Distance와 온도가 재료제거와 연마 불균일도에 주는 영향
Effect of Sliding Distance and Temperature on Material Non-uniformity in Oxide CMP
- Kim, Young-Jin (Precision Manufacturing System Div., Pusan National Univ.) ;
- Park, Boum-Young (Mechanical Engineering Dept., Pusan National Univ.) ;
- Cho, Han-Chul (Precision Manufacturing System Div., Pusan National Univ.) ;
- Jeong, Hae-Do (Mechanical Engineering Dept., Pusan National Univ.)
- 발행 : 2007.06.21
초록
Through the single head kinematics, sliding distance is a movement of a pad within wafer. The sliding distance is very important to frictional heat, material removal, and so on. A Temperature distribution is similar to sliding distance. But is not same. Because of complex process factor in CMP. A platen velocity is a dominant factor in a temperature and material removal. WIWNU is low in head faster condition.