Proceedings of the Korean Institute of Surface Engineering Conference (한국표면공학회:학술대회논문집)
- 2007.11a
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- Pages.147-148
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- 2007
High-temperature oxidation of Ti3(Al,Si)C2 nano-laminated compounds in air
- Lee, Hwa-Shin (Center for Advanced Plasma Surface Technology, Sungkyunkwan University) ;
- Lee, Dong-Bok (Center for Advanced Plasma Surface Technology, Sungkyunkwan University)
- Published : 2007.11.12
Abstract
The compound, Ti3(Al,Si)C2, was synthesized by hot pressing a powder mixture of TiCX, Al and Si. Its oxidation at 900 and 1000 oC in air for up to 50 h resulted in the formation of rutile-TiO2, -Al2O3 and amorphous SiO2. During oxidation, Ti diffused outwards to form the outer TiO2 layer, and oxygen was transported inwards to form the inner mixed layer.
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