Analysis of Decoupling Capacitor for High Frequency Systems

  • Jung, Y.C. (School of Electrical and Computer Engineering, University of Seoul) ;
  • Hong, K.K. (School of Electrical and Computer Engineering, University of Seoul) ;
  • Kim, H.M. (School of Electrical and Computer Engineering, University of Seoul) ;
  • Hong, S.K. (Dept. of Digital electrical Design, Hyejeon College) ;
  • Kim, C.J. (School of Electrical and Computer Engineering, University of Seoul)
  • 발행 : 2007.07.11

초록

In this paper a embedded decoupling capacitor design with gap structure will be discussed. A novel structure is modeling and analization by High Frequency Structure Simulator (HFSS). Proposed capacitor have $2m{\times}2m$ in rectangular shape. The film thickness of copper/dielectric film/substrate is respectively 35um/20um/35um. A dielectric layer of BaTiO3/epoxy has the relative permittivity of 25. Compare of the planar decoupling capacitor, capacitance densities of this structure in the range of $55{\mu}F$/mm2 have been obtained with 50um gap while capacitance densities of planar structure $55{\mu}F$/mm2 in the same size. The frequency dependent behavior of capacitors is numerically extracted over a wide frequency bandwidth 500MHz-7GHz. The decoupling capacitor can work at high frequency band increasing the gap size.

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