Improvement of Current Uniformity by Adjusting Ohmic Resitivity on the Surface in Light Emitting Diodes

발광 다이오드에서 분균일 전극의 Ohmic특성을 이용한 전류분포 균일도 향상

  • 황성민 (한양대학교 전자컴퓨터공학부, 고속회로연구실) ;
  • 윤주선 (한양대학교 전자컴퓨터공학부, 고속회로연구실) ;
  • 심종인 (한양대학교 전자컴퓨터공학부, 고속회로연구실)
  • Published : 2008.02.01

Abstract

In order to suppress the current crowding in light emitting diodes (LEDs) grown on sapphire substrate, the effect of nonuniform contact resistivity between TME layer and p-GaN layer on the LED surface was theoretically investigated. The analysis results showed that current crowding occurring around p-electrode could be considerably improved, which in turn would be helpful to improve the electrostatic discharge (ESD) characteristic.

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