한국정보디스플레이학회:학술대회논문집
- 2008.10a
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- Pages.91-93
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- 2008
Organic field-effect transistors with step-edge structure
Abstract
The organic field-effect transistors with step-edge structure were fabricated. Source and drain electrodes were obliquely deposited by vacuum evaporation. The step-edge of the gate electrode serve as a shadow mask, and the short channel is formed at the step-edge. The excellent device performances were obtained.