A New I-V Equation for Thin Film Transistors and Its Parameter Extraction Method

  • Jung, Keum-Dong (Inter-University Semiconductor Research Center (ISRC) and School of Electrical Engineering and Computer Science, Seoul National University) ;
  • Kim, Yoo-Chul (Inter-University Semiconductor Research Center (ISRC) and School of Electrical Engineering and Computer Science, Seoul National University) ;
  • Park, Byung-Gook (Inter-University Semiconductor Research Center (ISRC) and School of Electrical Engineering and Computer Science, Seoul National University) ;
  • Shin, Hyung-Cheol (Inter-University Semiconductor Research Center (ISRC) and School of Electrical Engineering and Computer Science, Seoul National University) ;
  • Lee, Jong-Duk (Inter-University Semiconductor Research Center (ISRC) and School of Electrical Engineering and Computer Science, Seoul National University)
  • Published : 2008.10.13

Abstract

Based on the device physics, a new I-V equation for TFTs is derived and a simple parameter extraction method is suggested. The new method gives more physically meaningful threshold voltage and mobility, and the obtained values can be directly used for the TFT device modeling.

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