한국정보디스플레이학회:학술대회논문집

The Korean Infomation Display Society (한국정보디스플레이학회)
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Hot Carrier Reliability of Short Channel ($L=1.5{\mu}m$) P-type Low Temperature poly-Si TFT

  • Choi, Sung-Hwan (School of Electrical Engineering and Computer Science, Seoul National University) ;
  • Shin, Hee-Sun (School of Electrical Engineering and Computer Science, Seoul National University) ;
  • Lee, Won-Kyu (School of Electrical Engineering and Computer Science, Seoul National University) ;
  • Kuk, Seung-Hee (School of Electrical Engineering and Computer Science, Seoul National University) ;
  • Han, Min-Koo (School of Electrical Engineering and Computer Science, Seoul National University)
  • Published : 2008.10.13
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Abstract

We have investigated the reliability of short channel ($L=1.5{\mu}m$) p-type ELA poly-Si TFTs under hot carrier stress. Threshold voltage of short channel TFT was significantly more shifted to positive direction than that of long channel TFT under the same stress. This result may be attributed to electron trapping at the interface between poly-Si film and gate oxide layer.

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