Direct Deposition of high quality nanocrystalline Silicon Films by Catalytic CVD at Low Temperatures (<200 K)

  • Kim, Tae-Hwan (Dept. of Nano Science and Technology, University of Seoul) ;
  • Lee, Kyoung-Min (Dept. of Nano Science and Technology, University of Seoul) ;
  • Hwang, Jae-Dam (Dept. of Nano Science and Technology, University of Seoul) ;
  • Hong, Wan-Shick (Dept. of Nano Science and Technology, University of Seoul)
  • Published : 2008.10.13

Abstract

We attempted modulation of the hydrogen dilution ratio in a Cat-CVD system to achieve both the minimal incubation layer and the high throughput. We obtained the incubation layer thickness of 3 nm, and were able to grow a 200 nm-thick film having a 70 % crystallinity in 18 minutes.

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