한국정보디스플레이학회:학술대회논문집
- 2008.10a
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- Pages.270-271
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- 2008
Improvement of source-drain contact properties of organic thin-film transistors by metal oxide and molybdenum double layer
- Kim, Keon-Soo (Dept. of Display and Semiconductor Physics, Korea University) ;
- Kim, Dong-Woo (Dept. of Display and Semiconductor Physics, Korea University) ;
- Kim, Doo-Hyun (Dept. of Display and Semiconductor Physics, Korea University) ;
- Kim, Hyung-Jin (Dept. of Display and Semiconductor Physics, Korea University) ;
- Lee, Dong-Hyuck (Dept. of Display and Semiconductor Physics, Korea University) ;
- Hong, Mun-Pyo (Dept. of Display and Semiconductor Physics, Korea University)
- Published : 2008.10.13
Abstract
The contact resistance between organic semiconductor and source-drain electrode in Bottom Contact Organic Thin-Film Transistors (BCOTFTs) can be effectively reduced by metal oxide/molybdenum double layer structure; metal oxide layers including nickel oxide (NiOx/Mo) and moly oxide(MoOx) under molybdenum work as a high performance carrier injection layer. Step profiles of source-drain electrode can be easily achieved by simultaneous etching of the double layers using the difference etching rate between metal oxides and metal layers.