Air stable n-type organic field effect transistors using a perfluoropolymer insulator

  • Jang, Jun-Hyuk (Dept. of Materials Science and Engineering and Center for OLED, Seoul National University) ;
  • Kim, Ji-Whan (Dept. of Materials Science and Engineering and Center for OLED, Seoul National University) ;
  • Park, Noh-Hwal (Dept. of Materials Science and Engineering and Center for OLED, Seoul National University) ;
  • Kim, Jang-Joo (Dept. of Materials Science and Engineering and Center for OLED, Seoul National University)
  • Published : 2008.10.13

Abstract

Air stable n-type organic field effect transistors (OFETs) based on CB60B are realized using a perfluoropolymer as the gate dielectric layer. The devices showed the field-effect mobility of $0.05\;cm^2P/V\;s$ in ambient air. Replacing the gate dielectric material by $SiO_2$ resulted in no transistor action in ambient air. Perfluorinated gate dielectric layer reduces interface traps significantly for the n-type semiconductor even in ambient air.

Keywords