한국정보디스플레이학회:학술대회논문집
- 2008.10a
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- Pages.276-279
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- 2008
Air stable n-type organic field effect transistors using a perfluoropolymer insulator
- Jang, Jun-Hyuk (Dept. of Materials Science and Engineering and Center for OLED, Seoul National University) ;
- Kim, Ji-Whan (Dept. of Materials Science and Engineering and Center for OLED, Seoul National University) ;
- Park, Noh-Hwal (Dept. of Materials Science and Engineering and Center for OLED, Seoul National University) ;
- Kim, Jang-Joo (Dept. of Materials Science and Engineering and Center for OLED, Seoul National University)
- Published : 2008.10.13
Abstract
Air stable n-type organic field effect transistors (OFETs) based on CB60B are realized using a perfluoropolymer as the gate dielectric layer. The devices showed the field-effect mobility of