Passivation of organic light emitting diodes with $Al_2O_3/Ag/Al_2O_3$ multilayer thin films grown by twin target sputtering system

  • Jeong, Jin-A (Department of Information and Nano-Materials Engineering, Kumoh National Institute of Technology) ;
  • Kim, Han-Ki (Department of Information and Nano-Materials Engineering, Kumoh National Institute of Technology)
  • Published : 2008.10.13

Abstract

The characteristics of $Al_2O_3/Ag/Al_2O_3$ multilayer passivaton prepared by twin target sputtering (TTS) system for organic light emitting diodes. The $Al_2O_3/Ag/Al_2O_3$ multilayer thin film passivation on a PET substrate had a high transmittance of 86.44 % and low water vapor transmission rate (WVTR) of $0.011\;g/m^2$-day due to the surface plasmon resonance (SPR) effect of Ag interlayer and effective multilayer structure for preventing the intrusion of water vapor. Using synchrotron x-ray scattering and field emission scanning electron microscope (FESEM) examinations, we investigated the growth behavior of Ag layer on the $Al_2O_3$ layer to explain the SPR effect of the Ag layer. This indicates that an $Al_2O_3/Ag/Al_2O_3$ multilayer passivation is a promising thin film passivation scheme for organic based flexible optoelectronics.

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