Phenyl-Naphthyl Amine Effect of New Phenothiazine Derivatives with High Tg for Hole Injection and Hole Transporting Materials

  • Kim, Soo-Kang (Department of Chemistry, The Catholic University of Korea) ;
  • Lee, Ji-Hoon (Department of Polymer Science and Engineering, Chungju National University) ;
  • Park, Jong-Wook (Department of Chemistry, The Catholic University of Korea)
  • Published : 2008.10.13

Abstract

We synthesized a new HIL and HTL materials by using phenothiazinly moiety, 1,4-diphenothiazyl-benzene [DPtzB], 3',7',3",7"-tetrakis(N-phenyl-2-naphthylamine)-1,4-diphenothiazyl-benzene[PNA-DPtzB]. Synthesized materials exhibited high Tg in the range of $175\;-\;202^{\circ}C$. These values are much better than commonly used hole transporting materials (2-TNATA and NPB). The OLED device that used DPtzB as a HIL showed the highest efficiency of 4.31cd/A at $10mA/cm^2$.

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