Effect of $HfO_X$ treatment on ITO surface of organic light emitting diodes using Impedance spectroscopy analysis

  • Cho, Jae-Hyun (School of information and communication engineering, Sungkyunkwan University) ;
  • Park, Hyung-Jun (School of information and communication engineering, Sungkyunkwan University) ;
  • Han, Kyu-Min (School of information and communication engineering, Sungkyunkwan University) ;
  • Sohn, Sun-Young (Department of Physics, Institute of Basic Science, and Brain Korea 21 Physics Research Division, Sungkyunkwan University) ;
  • Jung, Dong-Geun (Department of Physics, Institute of Basic Science, and Brain Korea 21 Physics Research Division, Sungkyunkwan University) ;
  • Yi, Jun-Sin (School of information and communication engineering, Sungkyunkwan University)
  • Published : 2008.10.13

Abstract

In this work, we used impedance spectroscopy analysis to determine the effect of the $HfO_X$ treatment on the surface of ITO and to model the equivalent circuit for OLEDs. Devices with an ITO/Organic material/Al structure can be modeled as resistances and capacitances arranged in parallel or in series. The number of elements depends on the composition of the structure, essentially the number of layers, and the contacts.

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