한국정보디스플레이학회:학술대회논문집

The Korean Infomation Display Society (한국정보디스플레이학회)
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Study of Plasma Process Induced Damages on Metal Oxides as Buffer Layer for Inverted Top Emission Organic Light Emitting Diodes

  • Kim, Joo-Hyung (Dept. of Display and Semiconductor Physics, Korea University) ;
  • Lee, You-Jong (Dept. of Display and Semiconductor Physics, Korea University) ;
  • Jang, Jin-Nyoung (Dept. of Display and Semiconductor Physics, Korea University) ;
  • Song, Byoung-Chul (Dept. of Display and Semiconductor Physics, Korea University) ;
  • Hong, Mun-Pyo (Dept. of Display and Semiconductor Physics, Korea University)
  • Published : 2008.10.13
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Abstract

In the fabrication of inverted top emission organic light emitting diodes (ITOLEDs), the organic layers are damaged by high-energy plasma sputtering process for transparent top anode. In this study, the plasma process induced damages on metal oxide hole injection layers (HILs) including $WO_3$, $MoO_3$, and $V_2O_5$ as buffer layer are examined. With the result of IV characteristic of hole-only devices, we propose that $MoO_3$ and $V_2O_5$ are stable materials against plasma sputtering process.

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