Polymeric Flexible Field Effect Transistors using Oriented Poly(3-hexylthiophene-2,5-diyl)

  • Lee, Yeong-Beom (LCD Technology Center, LCD Business, Samsung Electronics Co. Ltd.) ;
  • Shim, Hong-Ku (Department of Chemistry, Korea Advanced Institute of Science and Technology)
  • Published : 2008.10.13

Abstract

The properties of oriented poly(3-hexylthiophene-2,5-diyl) in field effect transistors (FETs) have been investigated through mechanical stretching process as the original. Silicon-based FETs shown high mobility of $0.02\;cm^2/V$ s after thermal treatment and $0.0092\;cm^2/V$ s at r.t. PET-based FETs were expected to show a similar performance in mobility to that of silicon-based FETs.

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