The Simplified LDD Process of LTPS TFT on PI Substrate

  • Hu, Guo-Ren (Display technology center/Industrial technology research institute) ;
  • Kung, Bo-Cheng (Display technology center/Industrial technology research institute) ;
  • He, King-Yuan (Display technology center/Industrial technology research institute) ;
  • Cheng, Chi-Hong (Display technology center/Industrial technology research institute) ;
  • Huang, Yeh-Shih (Display technology center/Industrial technology research institute) ;
  • Liu, Chan-Jui (Display technology center/Industrial technology research institute) ;
  • Tsai, Cheng-Ju (Display technology center/Industrial technology research institute) ;
  • Huang, Jung-Jie (Display technology center/Industrial technology research institute)
  • Published : 2008.10.13

Abstract

Traditional LTPS TFT needs additional LDD process to decrease leakage current. However the fabrication process is no suitable for PI substrate. Additional laser multi-irradiation will damage the poly-Si to cause the TFT electrical degrade. Therefore we propose the simplified process to activate the $N^+$ and $N^-$ at the same time.

Keywords