Low temperature curable organic gate insulator for organic field-effect transistors

  • Kim, Joo-Young (Department of Materials Science and Engineering, Seoul National University) ;
  • Jung, Myung-Sup (Materials Research Laboratory, Samsung Electronics) ;
  • Lee, Sang-Yoon (Display Laboratory, Samsung Electronics) ;
  • Kim, Jong-Min (Frontier Research Laboratory, Samsung Electronics) ;
  • Kim, Jang-Joo (Department of Materials Science and Engineering, Seoul National University)
  • Published : 2008.10.13

Abstract

Low-temperature curable organic insulator was prepared through blending of polyimide type base resin and cross-linking agent. The newly developed resin can be formed into films using a wet process and cured at $130^{\circ}C$. Using the low temperature cured film as the gate dielectric layer, the field effect mobility of $0.15\;cm^2/V{\cdot}s$ was obtained from a pentacene field effect transistor in the saturation regime and no hysteresis behavior was observed in transfer curves.

Keywords