한국정보디스플레이학회:학술대회논문집
- 2008.10a
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- Pages.867-869
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- 2008
The Improvement of the Off-Current Characteristics in the Short Channel a-Si:H TFTs
- Bang, J.H. (LG Display) ;
- Ahn, Y.K. (LG Display) ;
- Ryu, W.S. (LG Display) ;
- Kim, J.O. (LG Display) ;
- Kang, Y.K. (LG Display) ;
- Yang, J.Y. (LG Display) ;
- Yang, M.S. (LG Display) ;
- Kang, I.B. (LG Display) ;
- Chung, I.J. (LG Display)
- Published : 2008.10.13
Abstract
We have investigated the effects of hydrogen plasma treatment by PECVD (Plasma Enhanced Chemical Vapor Deposition) in the back channel region, the method for reducing the off state leakage current which increases with the short channel length of a-Si:H TFTs. To improve the off current characteristics, we analyzed the hydrogen plasma treatment with various RF power and plasma treatment times of PECVD. As the result of hydrogen plasma treatment in the back channel region it was remarkably reduced the off current level of 2um channel length TFT.