한국정보디스플레이학회:학술대회논문집

The Korean Infomation Display Society (한국정보디스플레이학회)
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Red-shift of the photoluminescence peak of N-doped ZnO phosphors

  • Kim, Jun-Kwan (MIT Device Team, IT-Convergence & Components Laboratory, Electronics and Telecommunications Research Institute) ;
  • Lim, Jung-Wook (MIT Device Team, IT-Convergence & Components Laboratory, Electronics and Telecommunications Research Institute) ;
  • Kim, Hyun-Tak (MIT Device Team, IT-Convergence & Components Laboratory, Electronics and Telecommunications Research Institute) ;
  • Yun, Sun-Jin (MIT Device Team, IT-Convergence & Components Laboratory, Electronics and Telecommunications Research Institute)
  • Published : 2008.10.13
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Abstract

ZnO films were fabricated using rf-magnetron sputter deposition process with different $N_2$ ambient. N-content in N-doped ZnO films was less than 1%. The wavelength of the highest intensity PL peak of N-doped ZnO was shifted to higher wavelength with increasing $N_2$ flow rate in the deposition ambient. These results indicated that the optical property of ZnO was significantly affected by the defect level created by doping with a very small amount of N.

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