한국정보디스플레이학회:학술대회논문집

The Korean Infomation Display Society (한국정보디스플레이학회)
권호 표지

Nonvolatile memory devices with oxide-nitride-oxynitride stack structure for system on panel of mobile flat panel display

  • Jung, Sung-Wook (School of Information and Communication Engineering, Sungkyunkwan University) ;
  • Choi, Byeong-Deog (School of Information and Communication Engineering, Sungkyunkwan University) ;
  • Yi, Jun-Sin (School of Information and Communication Engineering, Sungkyunkwan University)
  • Published : 2008.10.13
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Abstract

In this work, nonvolatile memory (NVM) devices for system on panel of flat panel display (FPD) were fabricated using low temperature polycrystalline silicon (LTPS) thin film transistor (TFT) technology with an oxide-nitride-oxynitride (ONOn) stack structure on glass. The results demonstrate that the NVM devices fabricated using the ONOn stack structure on glass have suitable switching characteristics for data storage with a low operating voltage, a threshold voltage window of more than 1.8 V between the programming and erasing (P/E) states after 10 years and its initial threshold voltage window (${\Delta}V_{TH}$) after $10^5$ P/E cycles.

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