한국정보디스플레이학회:학술대회논문집

The Korean Infomation Display Society (한국정보디스플레이학회)
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Crystallization of a-Si Induced by Ni-Si oxide source

  • Meng, Z. (Institute of Photo-electronics, Tianjin Key Laboratory of Photo-electronic Thin Film Devices and Technology, Nankai University) ;
  • Liu, Z. (Institute of Photo-electronics, Tianjin Key Laboratory of Photo-electronic Thin Film Devices and Technology, Nankai University) ;
  • Zhao, S. (Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology) ;
  • Wu, C. (Institute of Photo-electronics, Tianjin Key Laboratory of Photo-electronic Thin Film Devices and Technology, Nankai University) ;
  • Wong, M. (Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology) ;
  • Kwok, H. (Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology) ;
  • Xiong, S. (Institute of Photo-electronics, Tianjin Key Laboratory of Photo-electronic Thin Film Devices and Technology, Nankai University)
  • Published : 2008.10.13
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Abstract

Metal induced crystallization of a-Si with a source of Ni/Si oxide was studied. Its mechanism to induce crystallization was discussed. It was found that new source behaves an effect of self-released nickel and reducing nickel residua, so can provide a wider process tolerance; improve the uniformity and stability of TFTs.

Keywords