한국정보디스플레이학회:학술대회논문집
- 2008.10a
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- Pages.1057-1059
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- 2008
Effect of Sc doping on the electron emission properties of an MgO protective layer.
- Matulevich, Y.T. (Material Laboratory, Corporate R&D center, Samsung SDI) ;
- Lee, Min-Suk (Material Laboratory, Corporate R&D center, Samsung SDI) ;
- Moon, Sung-Hwan (Material Laboratory, Corporate R&D center, Samsung SDI) ;
- Choi, Jong-Seo (Material Laboratory, Corporate R&D center, Samsung SDI) ;
- Zang, Dong-Sik (Material Laboratory, Corporate R&D center, Samsung SDI)
- Published : 2008.10.13
Abstract
Study of the ion-induced-, photo- and exo-electron emission from a Sc doped MgO protective layer has been performed. It is established that doping with Sc increases photo- and especially exo-electron emission from MgO films while the ion-induced electron emission coefficient