한국정보디스플레이학회:학술대회논문집
- 2008.10a
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- Pages.1097-1100
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- 2008
Optimization of a-IGZO Thin-Film Transistors for OLED Applications
- Chung, Hyun-Joong (Corporate R&D Center, Samsung SDI Co., LTD.) ;
- Yang, Hui-Won (Corporate R&D Center, Samsung SDI Co., LTD.) ;
- Kim, Min-Kyu (Corporate R&D Center, Samsung SDI Co., LTD.) ;
- Jeong, Jong-Han (Corporate R&D Center, Samsung SDI Co., LTD.) ;
- Ahn, Tae-Kyung (Corporate R&D Center, Samsung SDI Co., LTD.) ;
- Kim, Kwang-Suk (Corporate R&D Center, Samsung SDI Co., LTD.) ;
- Kim, Eun-Hyun (Corporate R&D Center, Samsung SDI Co., LTD.) ;
- Kim, Sung-Ho (AM Development Team, Samsung SDI Co., LTD.) ;
- Im, Jang-Soon (AM Development Team, Samsung SDI Co., LTD.) ;
- Choi, Jong-Hyun (AM Development Team, Samsung SDI Co., LTD.) ;
- Park, Jin-Seong (Corporate R&D Center, Samsung SDI Co., LTD.) ;
- Jeong, Jae-Kyeong (Corporate R&D Center, Samsung SDI Co., LTD.) ;
- Mo, Yeon-Gon (Corporate R&D Center, Samsung SDI Co., LTD.) ;
- Kim, Hye-Dong (Corporate R&D Center, Samsung SDI Co., LTD.)
- Published : 2008.10.13
Abstract
We demonstrate that the performance of amorphous indium-gallium-zinc-oxide (IGZO) thin-film transistors (TFT) can be optimized by controlling the interfaces between IGZO and sandwiching insulators and by proper deposition of IGZO layer. Specifically, contact and channel resistances are decreased by reducing IGZO bulk resistance and optimizing dry-etch process, respectively. Field-effect mobility (