한국정보디스플레이학회:학술대회논문집
- 2008.10a
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- Pages.1149-1152
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- 2008
Monolithic Polychromatic InGaN Light-Emitting Diodes Based on Micro-facet Structures
- Funato, Mitsuru (Dept. of Electronic Sci. and Eng. Kyoto University) ;
- Kawakami, Yoichi (Dept. of Electronic Sci. and Eng. Kyoto University)
- Published : 2008.10.13
Abstract
Nitride semiconductor based light-emitting diodes attain a new functionality of polychromatic emission by the use of three-dimensionally faceted microstructures, which may lead to an advanced lighting technology in which the light source spectra are synthesized so as to meet requirements of the application.