한국정보디스플레이학회:학술대회논문집

The Korean Infomation Display Society (한국정보디스플레이학회)
권호 표지

High mobility indium free amorphous oxide based thin film transistors

  • Fortunato, E. (Department of Materials Science/CENIMAT/I3N, Faculty of Sciences and Technology, New University of Lisbon and CEMOP-UNINOVA) ;
  • Pereira, L. (Department of Materials Science/CENIMAT/I3N, Faculty of Sciences and Technology, New University of Lisbon and CEMOP-UNINOVA) ;
  • Barquinha, P. (Department of Materials Science/CENIMAT/I3N, Faculty of Sciences and Technology, New University of Lisbon and CEMOP-UNINOVA) ;
  • Do Rego, A. Botelho (CQFM, IST, Technical University of Lisbon) ;
  • Goncalves, G. (Department of Materials Science/CENIMAT/I3N, Faculty of Sciences and Technology, New University of Lisbon and CEMOP-UNINOVA) ;
  • Vila, A. (Department of Electronics, University of Barcelona) ;
  • Morante, J. (Department of Electronics, University of Barcelona) ;
  • Martins, R. (Department of Materials Science/CENIMAT/I3N, Faculty of Sciences and Technology, New University of Lisbon and CEMOP-UNINOVA)
  • Published : 2008.10.13
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Abstract

High mobility bottom gate thin film transistors (TFTs) with an amorphous gallium tin zinc oxide (a-GSZO) channel layer have been produced by rf magnetron cosputtering using a gallium zinc oxide (GZO) and tin (Sn) targets. The effect of the post annealing temperatures ($200^{\circ}C$, $250^{\circ}C$ and $300^{\circ}C$) was evaluated and compared with two series of TFTs produced at room temperature and $150^{\circ}C$ during the channel deposition. From the results it was observed that the effect of pos annealing is crucial for both series of TFTs either for stability as well as for improving the electrical characteristics. The a-GSZO TFTs operate in the enhancement mode (n-type), present a high saturation mobility of $24.6\;cm^2/Vs$, a subthreshold gate swing voltage of 0.38 V/decade, a turn-on voltage of -0.5 V, a threshold voltage of 4.6 V and an $I_{ON}/I_{OFF}$ ratio of $8{\times}10^7$, satisfying all the requirements to be used in active-matrix backplane.

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