Oxide Semiconductor TFTs for the Next Generation LCD-TV Applications

  • Lee, Je-Hun (LCD Business, Samsung Electronics Co., LTD) ;
  • Kim, Do-Hyun (LCD Business, Samsung Electronics Co., LTD) ;
  • Yang, Dong-Ju (LCD Business, Samsung Electronics Co., LTD) ;
  • Hong, Sun-Young (LCD Business, Samsung Electronics Co., LTD) ;
  • Yoon, Kap-Soo (LCD Business, Samsung Electronics Co., LTD) ;
  • Hong, Pil-Soon (LCD Business, Samsung Electronics Co., LTD) ;
  • Jeong, Chang-Oh (LCD Business, Samsung Electronics Co., LTD) ;
  • Lee, Woo-Geun (LCD Business, Samsung Electronics Co., LTD) ;
  • Song, Jin-Ho (LCD Business, Samsung Electronics Co., LTD) ;
  • Kim, Shi-Yul (LCD Business, Samsung Electronics Co., LTD) ;
  • Kim, Sang-Soo (LCD Business, Samsung Electronics Co., LTD) ;
  • Son, Kyoung-Seok (Samsung Advanced Institute of Technology, Display Device & Processing Lab) ;
  • Kim, Tae-Sang (Samsung Advanced Institute of Technology, Display Device & Processing Lab) ;
  • Kwon, Jang-Yeon (Samsung Advanced Institute of Technology, Display Device & Processing Lab) ;
  • Lee, Sang-Yoon (Samsung Advanced Institute of Technology, Display Device & Processing Lab)
  • Published : 2008.10.13

Abstract

For a large sized, ultra definition (UD) and high refresh rate for motion blur free AMLCD TVs, amorphous IGZO thin film transistor (TFT) are applied and investigated in terms of threshold voltage ($V_{th}$) shift influenced by active layer thickness uniformity, source drain etching technology, heat treatment and passivation condition. Optimizing above parameters, we fabricated the world's largest 15 inch XGA AMLCD successfully.