Dry Etch Process Development for TFT-LCD Fabrication Using an Atmospheric Dielectric Barrier Discharge

  • Choi, Shin-Il (LCD Technology Center, Samsung Electronics Co.. LTD.) ;
  • Kim, Sang-Gab (LCD Technology Center, Samsung Electronics Co.. LTD.) ;
  • Choi, Seung-Ha (LCD Technology Center, Samsung Electronics Co.. LTD.) ;
  • Kim, Shi-Yul (LCD Technology Center, Samsung Electronics Co.. LTD.) ;
  • Kim, Sang-Soo (LCD Technology Center, Samsung Electronics Co.. LTD.) ;
  • Lee, Seung-Hun (Dept. of Nuclear Engineering, Seoul National University) ;
  • Kwon, Ho-Cheol (Dept. of Nuclear Engineering, Seoul National University) ;
  • Kim, Gon-Ho (Dept. of Nuclear Engineering, Seoul National University)
  • Published : 2008.10.13

Abstract

We present the development of dry etch process for the liquid crystal display (LCD) fabrication using a dielectric barrier discharge (DBD) system at atmospheric pressure. In this experimental work, the dry etch characteristics and the electrical properties of thin film transistor are evaluated by using the scanning electron microscopy and electric probe, and TFT-LCD panel ($300\;mm\;{\times}\;400\;mm$) is manufactured with the application of the amorphous silicon etch step in the 4 mask and 5 mask processes.

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