한국정보디스플레이학회:학술대회논문집

The Korean Infomation Display Society (한국정보디스플레이학회)
권호 표지

$CsN_3$ as an air stable and low temperature evaporable novel n doping material for high efficiency and low driving voltage in organic light-emitting diodes

  • Lee, Jun-Yeob (Dept. of Polymer Science and Engineering, Dankook University) ;
  • Yook, Kyoung-Soo (Dept. of Polymer Science and Engineering, Dankook University) ;
  • Jeon, Soon-Ok (Dept. of Polymer Science and Engineering, Dankook University) ;
  • Joo, Chul-Woong (Dept. of Polymer Science and Engineering, Dankook University) ;
  • Lee, Tae-Woo (Samsung Advanced Institute of Technology) ;
  • Noh, Tae-Yong (Samsung Advanced Institute of Technology) ;
  • Yang, Haa-Jin (Samsung Advanced Institute of Technology) ;
  • Kang, Sung-Kee (Samsung Advanced Institute of Technology)
  • Published : 2008.10.13
Download PDF
⟨ Previous Next ⟩

Abstract

$CsN_3$ was developed as a novel n doping material with air stability and low deposition temperature. Evaporation temperature of $CsN_3$ was similar to that of common hole injection material and it worked well as a n dopant in electron transport layer. Driving voltage was lowered and high power efficiency was obtained in green phosphorescent devices by using $CsN_3$ as a dopant in electron transport layer. It could also be used as a charge generation layer in combination with $MoO_3$. In addition, n doping mechanism study revealed that $CsN_3$ is decomposed into Cs and $N_2$ during evaporation. This is the first work reporting air stable and low temperature evaporable n dopant in organic light-emitting diodes.

Keywords