Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
권호 표지

Erasing Characteristics Improvement in $HfO_2$ Charge Trap Flash (CTF) through Tunnel Barrier Engineering (TBE)

Tunnel Barrier Engineering (TBE)를 통한 $HfO_2$ Charge Trap Flash (CTF) Memory의 Erasing 특성 향상

  • Kim, Kwan-Su (Department of Electronic materials engineering, Kwangwoon Univ.) ;
  • Jung, Myung-Ho (Department of Electronic materials engineering, Kwangwoon Univ.) ;
  • Park, Goon-Ho (Department of Electronic materials engineering, Kwangwoon Univ.) ;
  • Jung, Jong-Wan (Department of Nano Science and Technology, Sejong Univ.) ;
  • Chung, Hong-Bay (Department of Electronic materials engineering, Kwangwoon Univ.) ;
  • Cho, Won-Ju (Department of Electronic materials engineering, Kwangwoon Univ.)
  • 김관수 (광운대학교 전자재료공학과) ;
  • 정명호 (광운대학교 전자재료공학과) ;
  • 박군호 (광운대학교 전자재료공학과) ;
  • 정종완 (세종대학교 나노신소재공학부) ;
  • 정홍배 (광운대학교 전자재료공학과) ;
  • 조원주 (광운대학교 전자재료공학과)
  • Published : 2008.11.06
Download PDF
⟨ Previous Next ⟩

Abstract

The memory characteristics of charge trap flash (CTF) with $HfO_2$ charge trap layer were investigated. Especially, we focused on the effects of tunnel barrier engineering consisted of $SiO_2/Si_3N_4/SiO_2$ (ONO) stack or $Si_3N_4/SiO_2/Si_3N_4$ (NON) stack. The programming and erasing characteristics were significantly enhanced by using ONO or NON tunnel barrier. These improvement are due to the increase of tunneling current by using engineered tunnel barrier. As a result, the engineered tunnel barrier is a promising technique for non-volatile flash memory applications.

Keywords