Characterization of CdS Thin Films for Compound Photovoltaic Applications by Atmospheres of Rapid Thermal Process

급속열처리 분위기에 따른 화합물 태양전지용 CdS 박막의 특성변화

  • 박승범 (충주대학교 전자공학과) ;
  • 권순일 (충주대학교 전자공학과) ;
  • 이석진 (충주대학교 전자공학과) ;
  • 정태환 (충주대학교 전자공학과) ;
  • 양계준 (충주대학교 전자공학과) ;
  • 임동건 (충주대학교 전자공학과) ;
  • 박재환 (충주대학교 전자공학과) ;
  • 송우창 (충주대학교 차세대 BINT 신기술연구소)
  • Published : 2008.11.06

Abstract

Structural, optical and electrical properties of CdS films deposited by chemical bath deposition (CBD), which are a very attractive method for low-cost and large-area solar cells, are presented. Cadmium sulfide (CdS) is II-VI semiconductor with a wide band gap of approximately 2.42 eV. CdS films have a great application potential such as solar cell, optical detector and optoelectronics device. In this paper, effects of Rapid Thermal Process (RTP) on the properties of CdS films were investigated. The CdS films were prepared on a glass by chemical bath deposition (CBD) and subsequently annealed at standard temperature $(400^{\circ}C)$ and treatment time (10 min) in various atmospheres (air, vacuum and $N_2$). The CdS films treated RTP in $N_2$ for to min were showed larger grain size and higher carrier density than the other samples.

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