Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Fabrication and Properties of $VF_2$-TrFE/Si(100) Structure by using Spin Coating Method

Spin Coating 법을 이용한 $VF_2$-TrFE/Si(100) 구조의 제작 및 특성

  • 이우석 (청주대학교 전자공학과) ;
  • 정상현 (청주대학교 전자공학과) ;
  • 곽노원 (청주대학교 전자공학과) ;
  • 김가람 (청주대학교 전자공학과) ;
  • 윤형선 (청주대학교 전자공학과) ;
  • 김광호 (청주대학교 전자공학과)
  • Published : 2008.11.06
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Abstract

The ferroelectric vinylidene fluoride-trifluoroethylene ($VF_2$-TrFE) and $Al_2O_3$ passivation layer for the Metal/Insulator/Ferroelectric/Semiconductor (MIFS) structure were deposited using spin coating and remote plasma atomic layer deposition (RPALD), respectively. A 2.5 ~ 3 wt % diluted solution of purified vinylidene fluoride-trifluoroethylene ($VF_2$: TrFE=70:30) in a DMF solution were prepared and deposited on silicon wafer at a optimized spin speed. After annealing in a vacuum ambient at 150 ~ $200^{\circ}C$ for 60 min, upper insulator layer were deposited at temperature ranging from 100 ~ $150^{\circ}C$ by RPALD. We described electrical and structural properties of MIFS fabricated by spin coating and RPALD methods.

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