Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Epitaxial Growth of ZnO Thin Films on (100) $LaAlO_3$ Substrate by Pulsed Laser Deposition

PLD를 이용한 (100) $LaAlO_3$ 기판위의 ZnO 에피택셜 박막 성장

  • Cho, Dae-Hyung (Department of Electrical Engineering, Korea University) ;
  • Kim, Ji-Hong (Department of Electrical Engineering, Korea University) ;
  • Moon, Byung-Moo (Department of Electrical Engineering, Korea University) ;
  • Jo, Yeong-Deuk (Department of Electronic Materials Engineering, Kwangwoon University) ;
  • Koo, Sang-Mo (Department of Electronic Materials Engineering, Kwangwoon University)
  • 조대형 (고려대학교 전자전기공학과) ;
  • 김지홍 (고려대학교 전자전기공학과) ;
  • 문병무 (고려대학교 전자전기공학과) ;
  • 조영득 (광운대학교 전자재료공학과) ;
  • 구상모 (광운대학교 전자재료공학과)
  • Published : 2008.11.06
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Abstract

We report epitaxial growth of ZnO thin films on (100) single-crystalline $LaAlO_3$ (LAO) substrates using pulsed laser deposition (PLD) at different substrate temperatures (400~$800^{\circ}C$). The structural and electrical properties of the films have been investigated by means of X-ray diffraction (XRD), atomic force microscope (AFM), transmission line method (TLM). The poly-crystalline of $\alpha$- and c-axis oriented ZnO film was formed at lower deposition temperature ($T_s$) of $400^{\circ}C$. At higher $T_s$, however, the films exhibit single-crystalline of $\alpha$-axis orientation represented by ZnO[$\bar{1}11$ || LAO <001>. The electrical properties of ZnO thin films depend upon their crystalline orientation, showing lower electrical resistivity values for $\alpha$-axis oriented ZnO films.

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