A Study on th properties and Fabrication of $CuGaS_2$ Ternary Compound thin film

$CuGaS_2$ 3원 화합물 박막의 제작과 분석에 관한 연구

For the manufacture of the $CuGaS_2$, Cu, Ga and S were vapor-deposited in the named order. Among them, Cu and Ga were vapor-deposited by using the Evaporation method in consideration of their adhesive force to the substrate so that the composition of Cu and Ga might be 1 : 1, while the surface temperature having an effect on the quality of the thin film was changed from R.T.[$^{\circ}C$] to 150$[^{\circ}C]$ at intervals of 50$[^{\circ}C]$. As a result, at 400$[^{\circ}C]$ of the Annealing temperature, their chemical composition was measured in the proportion of 1 : 1 : 2. It could be known from this experimental result that it is the optimum condition to conduct Annealing on the $CuGaS_2$ thin film under a vacuum when the $CuGaS_2$ thin film as an optical absorption layer material for a solar cell is manufactured.