한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)

한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
권호 표지

DC 마그네트론 스퍼트링법으로 제조한 ZnO:N,Al 박막의 전기적 특성에 관한연구

Electrical properties of AZO transparent conductive oxide with substrate bias and $H_2$ annealing

  • 유연연 (원광대학교 WRISS, 전기전자및정보공학부) ;
  • 소병문 (국립익산대학교) ;
  • 박춘배 (원광대학교 WRISS, 전기전자및정보공학부)
  • Liu, Yan-Yan (Wonkwang Univ. WRISS, School of Electrical Electronic and Information Engineering) ;
  • So, Byung-Moon (National Iksan Uni.) ;
  • Park, Choon-Bae (Wonkwang Univ. WRISS, School of Electrical Electronic and Information Engineering)
  • 발행 : 2008.11.06
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초록

Al, N-codoped ZnO(ZnO:N,Al) thin films were deposited on n-type Si(100) substrate at $450^{\circ}C$ with various conditions of ambient gas$(N_2:O_2)$ by DC magnetron sputtering method using ZnO:$Al_2O_3$(2wt%) as a target, and then were annealed at 500, 700, $800^{\circ}C$ in $N_2$ gas for one hour. XRD patterns showed that all of the ZnO:N,Al thin films annealed at $80^{\circ}C$ grew with two peaks, which means poor crystallinity of the thin films deposited. Hall effects in Van der Pauw configuration proved that after annealing the films deposited showed low resistivity and high carrier concentration. While the films annealed at $800^{\circ}C$ showed low resistivity of $\sim10^{-2}\Omega$ cm and high carrier concentration of $\sim10^{19}cm^{-3}$.

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