Electrical properties of AZO transparent conductive oxide with substrate bias and $H_2$ annealing

기판바이어스와 수소열처리에 의한 AZO 투명전도막의 전기적 특성

  • 정윤환 (원광대학교 WRISS, 전기전자및정보공학부) ;
  • 안정근 (원광전자) ;
  • 최대섭 (서해대학) ;
  • 박춘배 (원광대학교 WRISS, 전기전자및정보공학부)
  • Published : 2008.11.06

Abstract

Transparent conductive oxide (TCO) are necessary as front electrode or anti-reflecting coating for increasing efficiency of LED and Photodiode. In this paper, aluminum-doped Zinc oxide films(AZO) were prepared by RF magnetron sputtering on Si substrate at room temperature with application of substrate bias from -60 to 60 V. Then annealed at temperature of 200, 300 and $400^{\circ}C$ for 1hr in $H_2$ ambient. Structural and electrical property of AZO thin films were investigated.

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