한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)

한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
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수직 배향된 Ga-doped ZnO nanorods의 합성과 전기적 특성

Ga-doped ZnO nanorod arrays grown by thermal evaporation and their electrical behavior

  • 안철현 (성균관대학교 신소재공학부) ;
  • 한원석 (성균관대학교 신소재공학부) ;
  • 공보현 (성균관대학교 신소재공학부) ;
  • 김영이 (성균관대학교 신소재공학부) ;
  • 조형균 (성균관대학교 신소재공학부) ;
  • 김준제 (한국해양대학교 나노데이터시스템학부) ;
  • 김홍승 (한국해양대학교 나노데이터시스템학부)
  • Ahn, C.H. (School of Advanced Materials Science and Engineering, Sungkyunkwan University) ;
  • Han, W.S. (School of Advanced Materials Science and Engineering, Sungkyunkwan University) ;
  • Kong, B.H. (School of Advanced Materials Science and Engineering, Sungkyunkwan University) ;
  • Kim, Y.Y. (School of Advanced Materials Science and Engineering, Sungkyunkwan University) ;
  • Cho, H.K. (School of Advanced Materials Science and Engineering, Sungkyunkwan University) ;
  • Kim, J.J. (Major of Semiconductor Physics, Korea Maritime University) ;
  • Kim, H.S. (Major of Semiconductor Physics, Korea Maritime University)
  • 발행 : 2008.11.06
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초록

Vertically well-aligned Ga-doped ZnO nanorods with different Ga contents were grown by thermal evaporation on a ZnO template. The Ga-doped ZnO nanorods synthesized with 50 wt % Ga with respect to the Zn content showed maximum compressive stress relative to the ZnO template, which led to a rapid growth rate along the c-axis due to the rapid release of stored strain energy. A further increase in the Ga content improved the conductivity of the nanorods due to the substitutional incorporation of Ga atoms in the Zn sites based on a decrease in lattice spacing. The p-n diode structure with Ga-doped ZnO nanorods, as a n-type, displayed a distinct white light luminescence from the side-view of the device, showing weak ultraviolet and various deep-level emissions.

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