Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2008.06a
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- Pages.174-174
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- 2008
Fabrication and Characterization of MFIS-FET using Au/SBT/LZO/Si structure
- Im, Jong-Hyun (University of Seoul) ;
- Lee, Gwang-Geun (University of Seoul) ;
- Kang, Hang-Sik (University of Seoul) ;
- Jeon, Ho-Seung (University of Seoul) ;
- Park, Byung-Eun (University of Seoul) ;
- Kim, Chul-Ju (University of Seoul)
- Published : 2008.06.19
Abstract
Non-volatile memories using ferroelectric-gate field-effect transistors (Fe-FETs) with a metal/ferroelectric/semiconductor gate stack (MFS-FETs) make non-destructive read operation possible. In addition, they also have features such as high switching speed, non-volatility, radiation tolerance, and high density. However, the interface reaction between ferroelectric materials and Si substrates, i.e. generation of mobile ions and short retention, make it difficult to obtain a good ferroelectric/Si interface in an MFS-FET's gate. To overcome these difficulties, Fe-FETs with a metal/ferroelectric/insulator/semiconductor gate stack (MFIS-FETs) have been proposed, where insulator as a buffer layer is inserted between ferroelectric materials and Si substrates. We prepared