Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2008.06a
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- Pages.212-213
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- 2008
Characteristic Analysis of 1200V Insulated Gate Bipolar Transistor Devices
1200V급 절연게이트 바이폴라 트랜지스터 특성 해석
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Kim, Sang-Cheol
(Korea Electrotechnology Research Institute)
;
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Kim, Hyung-Woo
(Korea Electrotechnology Research Institute)
;
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Kang, In-Ho
(Korea Electrotechnology Research Institute)
;
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Joo, Sung-Jae
(Korea Electrotechnology Research Institute)
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김상철
(한국전기연구원 고집적전원연구그룹)
;
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김형우
(한국전기연구원 고집적전원연구그룹)
;
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강인호
(한국전기연구원 고집적전원연구그룹)
;
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주성재
(한국전기연구원 고집적전원연구그룹)
- Published : 2008.06.19
Abstract
This paper describes the analysis of the device characteristics of the NPT type 1200V Insulated gate Bipolar Transistor. In case of NPT type IGBT devices, optimized n-epi layer thickness and concentration is important to obtain low on-state voltage and breakdown voltage characteristics. In this paper, we analyzed on-state and off-state characteristics of NPT type IGBT. Breakdown voltage of designed IGBT was higher than 1200V when we optimized Field Limiting Ring structures. And also, on-state voltage characteristics was shown less then 2.5V at 25A of drain current.