Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Properties of MIM Ceramic Thin Film Structure

MIM 세라믹 박막 구조의 특성 분석

  • Published : 2008.06.19
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Abstract

The SCT thin films were deposited on Pt-coated electrode using RF sputtering method according to the deposition condition. The crystallinity of SCT thin films were increased with increase of deposition temperature in the temperature range of 100~500[$^{\circ}C$]. The optimum conditions of RF power and Ar/$O_2$ ratio were 140[W] and 80/20, respectively. Deposition rate of SCT thin films was about 18.75[$\AA$/min] at the optimum condition. The maximum dielectric constant of SCT thin film was obtained by annealing at $600^{\circ}C$.

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