Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2008.06a
- /
- Pages.367-367
- /
- 2008
Effect of nitrogen concentration on the microstructures of AlN thin films fabricated by reactive RF sputtering
반응성 RF 마그네트론 스퍼터링으로 증착한 AlN 박막의 특성에 질소농도 변화가 미치는 영향
- Lim, Dong-Ki (Sungkyunkwan University) ;
- Kim, Byoung-Kyun (Sungkyunkwan University) ;
- Jeong, S.W. (Sungkyunkwan University) ;
- Roh, Yong-Han (Sungkyunkwan University)
- Published : 2008.06.19
Abstract
Aluminum nitride (AlN) thin films have been deposited on Si substrate by using reactive RF magnetron sputtering method in a gas mixture of Ar and