The property of surface morphology of AZO films deposited at low temperature with post-annealing

저온증착 AZO 박막의 분위기 후열처리에 따른 표면 형상 특성

  • Jeong, Yun-Hwan (Wonkwang Univ. WRISS, School of Electrical Electronic and Information Engineering) ;
  • Chen, Ho (Wonkwang Univ. WRISS, School of Electrical Electronic and Information Engineering) ;
  • Song, Min-Jong (Kwangju Health Coll.) ;
  • Park, Choon-Bae (Wonkwang Univ. WRISS, School of Electrical Electronic and Information Engineering)
  • 정윤환 (원광대학교 WRISS, 전기전자및정보공학부) ;
  • 진호 (원광대학교 WRISS, 전기전자및정보공학부) ;
  • 송민종 (광주보건대학 의료공학과) ;
  • 박춘배 (원광대학교 WRISS, 전기전자및정보공학부)
  • Published : 2008.06.19

Abstract

Transparent conductive oxide (TCO) are necessary as front electrode or anti-reflecting coating for increasing efficiency of LED and Photodiode. In this paper, aluminum-doped Zinc oxide films(AZO) were prepared by DC magnetron sputtering on glass(corning 1737) and Si substrate at temperature of $100^{\circ}C$ and then annealed at temperature of $400^{\circ}C$ for 1hr in Ar and vaccum. The AZO films were etched in diluted HCL (0.5 %) to examine the surface morphology properties. After annealing, Structural and electrical property were investigated. The c-axis orientation along (002) plane was enhanced and the electrical resistivity of the AZO film decreased from $1.1\times10^{-1}$ to $1.6\times10^{-2}{\Omega}cm$. We observed textured structure of AZO thin film etched for 2s.

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