한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)
- 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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- Pages.439-440
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- 2008
ITO-IZO 이종 타겟 이용한 Indium Zinc Tin Oxide(IZTO)박막의 특성
Properties of IZTO Thin Film prepared by the Hetero-Target sputtering system
- Kim, Dae-Hyun (Kyungwon University) ;
- Rim, You-Seong (Kyungwon University) ;
- Jang, Kyung-Uk (Kyungwon University) ;
- Kim, Kyung-Hwan (Kyungwon University)
- 발행 : 2008.06.19
초록
Indium Zinc Tin Oxide (IZTO) thin films for transparent thin film transistor (TTFT) were deposited on glass substrate at room temperature by facing targets sputtering (FTS). The FTS system was designed to array two targets facing each other and forms the high- density plasma between. Two different kinds of targets were installed on FTS system. One is ITO (