한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)

한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
권호 표지

Bottom Gate IGZO 박막트랜지스터를 이용한 투명 AMOLED 패널 제작

AMOLED Panel Using Transparent Bottom Gate IGZO TFT

  • 조두희 (한국전자통신연구원 투명전자소자팀) ;
  • 양신혁 (한국전자통신연구원 투명전자소자팀) ;
  • 변춘원 (한국전자통신연구원 투명전자소자팀) ;
  • 신재헌 (한국전자통신연구원 투명전자소자팀) ;
  • 이정익 (한국전자통신연구원 투명전자소자팀) ;
  • 박은숙 (한국전자통신연구원 투명전자소자팀) ;
  • 권오상 (한국전자통신연구원 투명전자소자팀) ;
  • 황치선 (한국전자통신연구원 투명전자소자팀) ;
  • 추혜용 (한국전자통신연구원 투명전자소자팀) ;
  • 조경익 (한국전자통신연구원 투명전자소자팀)
  • Cho, D.H. (Transparent Electronics Team, Electronics and Communications Research Institute) ;
  • Yang, S.H. (Transparent Electronics Team, Electronics and Communications Research Institute) ;
  • Byun, C.W. (Transparent Electronics Team, Electronics and Communications Research Institute) ;
  • Shin, J.H. (Transparent Electronics Team, Electronics and Communications Research Institute) ;
  • Lee, J.I. (Transparent Electronics Team, Electronics and Communications Research Institute) ;
  • Park, E.S. (Transparent Electronics Team, Electronics and Communications Research Institute) ;
  • Kwon, O.S. (Transparent Electronics Team, Electronics and Communications Research Institute) ;
  • Hwang, C.S. (Transparent Electronics Team, Electronics and Communications Research Institute) ;
  • Chu, H.Y. (Transparent Electronics Team, Electronics and Communications Research Institute) ;
  • Cho, K.I. (Transparent Electronics Team, Electronics and Communications Research Institute)
  • 발행 : 2008.04.25
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초록

We have examined post-annealing and passivation for the transparent bottom gate IGZO TFT having an inverse co-planar structure. The oxygen-vacuum two step annealing enhanced the field effect mobility up to 18 $cm^2$/Vsandthesub-threshold swing down to 0.2V/dec. However, the hysterysis and the bias stability problems could not be solved just by post-annealing. Thus, we have passivated the bottom gate IGZO TFTs with organic and inorganic materials. $Ga_2O_3$, $Al_2O_3$, $SiO_2$ and some polymer materials were effective materials for passivations. The hysterysis and the stability of the TFTs were remarkably improved by the passivations. We have manufactured the AMOLED panel with the transparent bottom gate IGZO TFT array successfully.

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